The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V / -5V (30V max) with no maximum duty cycle limitations.
Two R12P22005D, R12P21503D, R12P21509D and R12P06S DC/DC modules each are included in the R-REF01-HB design kit.
NOTE: transistors sold separately.
The signal ground is galvanically isolated from the power ground and can be connected to any potential, as long as it is less than 2.5kV with respect to the power potential (high-side and low-side). The limiting element is the gate driver IC specification.
- Half-bridge voltage up to 1kV
- TTL-compatible signal input
- Single 15V to 42V supply
- Shoot-through protection
- Separate input for low and high-side switch for use with different topologies
- Qualified with 65kV/µs @ Vcommon mode =1KV
|Part number||Power (W)||Vin (VAC)||Vout (VDC)||Iout (mA)||No Of Outputs||Case||Isolation (kV)||Cont. SCP|