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DC/DC Converters for GaN Gate Drivers

The high switching speeds of the latest GaN HEMT technology cause parasitic effects, which could bring the entire gate driver in disarray. The PCB layout of the driver circuit plays a crucial part to manage these high-frequency parasitics.

This whitepaper shows how the usage of DC/DC converters with low leakage capacitance and compliance with design guidelines eliminate these causes of failure and simplify the design.

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